Please use this identifier to cite or link to this item:
Title: Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge
Authors: Chia, C.K.
Dalapati, G.K.
Chai, Y.
Lu, S.L.
He, W.
Dong, J.R.
Seng, D.H.L.
Hui, H.K.
Wong, A.S.W.
Lau, A.J.Y.
Cheng, Y.B.
Chi, D.Z.
Zhu, Z.
Yeo, Y.C. 
Xu, Z.
Yoon, S.F.
Issue Date: 15-Mar-2011
Citation: Chia, C.K., Dalapati, G.K., Chai, Y., Lu, S.L., He, W., Dong, J.R., Seng, D.H.L., Hui, H.K., Wong, A.S.W., Lau, A.J.Y., Cheng, Y.B., Chi, D.Z., Zhu, Z., Yeo, Y.C., Xu, Z., Yoon, S.F. (2011-03-15). Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge. Journal of Applied Physics 109 (6) : -. ScholarBank@NUS Repository.
Abstract: The material and optical properties of the GaAs/AlxGa 1-xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1-xAs buffer layer with x 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x 0.3 buffer layer. Analysis on change of strain in the AlxGa 1-xAs buffer layer suggests that the compressive strain at the AlxGa1-xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1-xAs interface when x ∼ 0.3. AlxGa1-xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3561489
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.