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https://doi.org/10.1063/1.3561489
Title: | Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge | Authors: | Chia, C.K. Dalapati, G.K. Chai, Y. Lu, S.L. He, W. Dong, J.R. Seng, D.H.L. Hui, H.K. Wong, A.S.W. Lau, A.J.Y. Cheng, Y.B. Chi, D.Z. Zhu, Z. Yeo, Y.C. Xu, Z. Yoon, S.F. |
Issue Date: | 15-Mar-2011 | Citation: | Chia, C.K., Dalapati, G.K., Chai, Y., Lu, S.L., He, W., Dong, J.R., Seng, D.H.L., Hui, H.K., Wong, A.S.W., Lau, A.J.Y., Cheng, Y.B., Chi, D.Z., Zhu, Z., Yeo, Y.C., Xu, Z., Yoon, S.F. (2011-03-15). Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge. Journal of Applied Physics 109 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3561489 | Abstract: | The material and optical properties of the GaAs/AlxGa 1-xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1-xAs buffer layer with x 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x 0.3 buffer layer. Analysis on change of strain in the AlxGa 1-xAs buffer layer suggests that the compressive strain at the AlxGa1-xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1-xAs interface when x ∼ 0.3. AlxGa1-xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface. © 2011 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82991 | ISSN: | 00218979 | DOI: | 10.1063/1.3561489 |
Appears in Collections: | Staff Publications |
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