Please use this identifier to cite or link to this item:
|Title:||Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge|
|Citation:||Chia, C.K., Dalapati, G.K., Chai, Y., Lu, S.L., He, W., Dong, J.R., Seng, D.H.L., Hui, H.K., Wong, A.S.W., Lau, A.J.Y., Cheng, Y.B., Chi, D.Z., Zhu, Z., Yeo, Y.C., Xu, Z., Yoon, S.F. (2011-03-15). Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge. Journal of Applied Physics 109 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3561489|
|Abstract:||The material and optical properties of the GaAs/AlxGa 1-xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1-xAs buffer layer with x 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x 0.3 buffer layer. Analysis on change of strain in the AlxGa 1-xAs buffer layer suggests that the compressive strain at the AlxGa1-xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1-xAs interface when x ∼ 0.3. AlxGa1-xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface. © 2011 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 21, 2019
WEB OF SCIENCETM
checked on Mar 12, 2019
checked on Feb 2, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.