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dc.titleRole of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge
dc.contributor.authorChia, C.K.
dc.contributor.authorDalapati, G.K.
dc.contributor.authorChai, Y.
dc.contributor.authorLu, S.L.
dc.contributor.authorHe, W.
dc.contributor.authorDong, J.R.
dc.contributor.authorSeng, D.H.L.
dc.contributor.authorHui, H.K.
dc.contributor.authorWong, A.S.W.
dc.contributor.authorLau, A.J.Y.
dc.contributor.authorCheng, Y.B.
dc.contributor.authorChi, D.Z.
dc.contributor.authorZhu, Z.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorXu, Z.
dc.contributor.authorYoon, S.F.
dc.identifier.citationChia, C.K., Dalapati, G.K., Chai, Y., Lu, S.L., He, W., Dong, J.R., Seng, D.H.L., Hui, H.K., Wong, A.S.W., Lau, A.J.Y., Cheng, Y.B., Chi, D.Z., Zhu, Z., Yeo, Y.C., Xu, Z., Yoon, S.F. (2011-03-15). Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge. Journal of Applied Physics 109 (6) : -. ScholarBank@NUS Repository.
dc.description.abstractThe material and optical properties of the GaAs/AlxGa 1-xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1-xAs buffer layer with x 0.3 and 0.6 are equally effective in suppressing the outdiffusion of Ge, whereas x 1.0 gives the most abrupt interface. The best morphology with surface rms of 0.3 nm is obtained in the structure with x 0.3 buffer layer. Analysis on change of strain in the AlxGa 1-xAs buffer layer suggests that the compressive strain at the AlxGa1-xAs-GaAs interface is compensated by the tensile strain at the Ge-AlxGa1-xAs interface when x ∼ 0.3. AlxGa1-xAs lattice matched to Ge is crucial for better result in surface morphology, but higher Al content is preferred for eliminating the interdiffusion of atoms at the heterointerface. © 2011 American Institute of Physics.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
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