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Title: Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy
Authors: Lee, R.T.-P. 
Tan, K.-M.
Liow, T.-Y.
Ho, C.-S.
Tripathy, S.
Samudra, G.S. 
Chi, D.-Z.
Yeo, Y.-C. 
Issue Date: 2007
Citation: Lee, R.T.-P., Tan, K.-M., Liow, T.-Y., Ho, C.-S., Tripathy, S., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2007). Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy. Journal of the Electrochemical Society 154 (5) : H361-H364. ScholarBank@NUS Repository.
Abstract: Micro-Raman spectroscopy has been applied to study the solid-state reaction of Er on Si(001) substrates. The Raman peaks observed at 204, 236, and 416 cm-1 were clearly established to be associated with the ErSi1.7 phase. The Raman data correlates well with results from Rutherford backscattering and X-ray diffraction. The results were further utilized to show that Raman spectroscopy can be used to assess the quality of ErSi1.7 formed, analogous to off-line electrical characterization techniques, for process monitoring. We demonstrate the potential of Raman spectroscopy as a process-monitoring tool to probe the formation of ErSi1.7 in microelectronic devices so as to aid process development and integration. © 2007 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
ISSN: 00134651
DOI: 10.1149/1.2710201
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