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|Title:||Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy||Authors:||Lee, R.T.-P.
|Issue Date:||2007||Citation:||Lee, R.T.-P., Tan, K.-M., Liow, T.-Y., Ho, C.-S., Tripathy, S., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2007). Probing the ErSi1.7 Phase formation by micro-Raman spectroscopy. Journal of the Electrochemical Society 154 (5) : H361-H364. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2710201||Abstract:||Micro-Raman spectroscopy has been applied to study the solid-state reaction of Er on Si(001) substrates. The Raman peaks observed at 204, 236, and 416 cm-1 were clearly established to be associated with the ErSi1.7 phase. The Raman data correlates well with results from Rutherford backscattering and X-ray diffraction. The results were further utilized to show that Raman spectroscopy can be used to assess the quality of ErSi1.7 formed, analogous to off-line electrical characterization techniques, for process monitoring. We demonstrate the potential of Raman spectroscopy as a process-monitoring tool to probe the formation of ErSi1.7 in microelectronic devices so as to aid process development and integration. © 2007 The Electrochemical Society.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/57125||ISSN:||00134651||DOI:||10.1149/1.2710201|
|Appears in Collections:||Staff Publications|
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