Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.020201jes
Title: Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain
Authors: Subramanian, S.
Ivana
Zhou, Q. 
Zhang, X.
Balakrishnan, M.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Subramanian, S., Ivana, Zhou, Q., Zhang, X., Balakrishnan, M., Yeo, Y.-C. (2012). Selective wet etching process for Ni-InGaAs contact formation in InGaAs N-MOSFETs with self-aligned source and drain. Journal of the Electrochemical Society 159 (1) : H16-H21. ScholarBank@NUS Repository. https://doi.org/10.1149/2.020201jes
Abstract: Etch rates of Ni-InGaAs metallic film and Ni in HCl, HNO 3, HF and SPM etch chemistries were determined using sheet resistance method, step height measurements, and cross sectional TEM characterization. HCl and HNO 3 based chemistries were studied in detail. The etch selectivity of Ni over Ni-InGaAs in various etchants was studied. Concentrated HCl was found to have the highest selectivity of approximately 15.6. HNO 3 (1:10) and HNO 3 (1:20) solutions provides good selectivities of 4.3 and 4.5 respectively. The results of this work could be useful for the formation of Ni-InGaAs self-aligned source and drain in InGaAs N-MOSFETs. © 2011 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/83001
ISSN: 00134651
DOI: 10.1149/2.020201jes
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