Please use this identifier to cite or link to this item:
|Title:||Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask||Authors:||Sinha, M.
|Keywords:||Aluminum (Al) implant
nickel silicide (NiSi)
Schottky barrier height
sulfur (S) implant
|Issue Date:||Sep-2010||Citation:||Sinha, M., Chor, E.F., Yeo, Y.-C. (2010-09). Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask. IEEE Electron Device Letters 31 (9) : 918-920. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2052586||Abstract:||This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height Φn B for n-FETs and a low hole barrier height ΦP B for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p-and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p-and n-FinFETs. © 2010 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82762||ISSN:||07413106||DOI:||10.1109/LED.2010.2052586|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 20, 2019
WEB OF SCIENCETM
checked on May 13, 2019
checked on May 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.