Please use this identifier to cite or link to this item:
|Title:||Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask||Authors:||Sinha, M.
|Keywords:||Aluminum (Al) implant
nickel silicide (NiSi)
Schottky barrier height
sulfur (S) implant
|Issue Date:||Sep-2010||Citation:||Sinha, M., Chor, E.F., Yeo, Y.-C. (2010-09). Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask. IEEE Electron Device Letters 31 (9) : 918-920. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2052586||Abstract:||This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height Φn B for n-FETs and a low hole barrier height ΦP B for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p-and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p-and n-FinFETs. © 2010 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82762||ISSN:||07413106||DOI:||10.1109/LED.2010.2052586|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.