Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2052586
Title: Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
Authors: Sinha, M.
Chor, E.F. 
Yeo, Y.-C. 
Keywords: Aluminum (Al) implant
contact resistance
double-species implant
FinFETs
nickel silicide (NiSi)
Schottky barrier height
sulfur (S) implant
Issue Date: Sep-2010
Source: Sinha, M., Chor, E.F., Yeo, Y.-C. (2010-09). Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask. IEEE Electron Device Letters 31 (9) : 918-920. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2052586
Abstract: This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height Φn B for n-FETs and a low hole barrier height ΦP B for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p-and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p-and n-FinFETs. © 2010 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82762
ISSN: 07413106
DOI: 10.1109/LED.2010.2052586
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