Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2052586
DC FieldValue
dc.titleNickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask
dc.contributor.authorSinha, M.
dc.contributor.authorChor, E.F.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:12Z
dc.date.available2014-10-07T04:33:12Z
dc.date.issued2010-09
dc.identifier.citationSinha, M., Chor, E.F., Yeo, Y.-C. (2010-09). Nickel-silicide contact technology with dual near-band-edge barrier heights and integration in CMOS FinFETs with single mask. IEEE Electron Device Letters 31 (9) : 918-920. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2052586
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82762
dc.description.abstractThis letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height Φn B for n-FETs and a low hole barrier height ΦP B for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p-and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p-and n-FinFETs. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2010.2052586
dc.sourceScopus
dc.subjectAluminum (Al) implant
dc.subjectcontact resistance
dc.subjectdouble-species implant
dc.subjectFinFETs
dc.subjectnickel silicide (NiSi)
dc.subjectSchottky barrier height
dc.subjectsulfur (S) implant
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2010.2052586
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume31
dc.description.issue9
dc.description.page918-920
dc.description.codenEDLED
dc.identifier.isiut000283185500006
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