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https://doi.org/10.1109/TED.2012.2233204
Title: | Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation | Authors: | Tong, Y. Han, G. Liu, B. Yang, Y. Wang, L. Wang, W. Yeo, Y.-C. |
Keywords: | Nickel stanogermanide Schottky barrier height (SBH) segregation selenium (Se) sulfur (S) |
Issue Date: | 2013 | Citation: | Tong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C. (2013). Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation. IEEE Transactions on Electron Devices 60 (2) : 746-752. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2233204 | Abstract: | The physics of ohmic contact formation for nickel stanogermanide [NiGe 1-xSnx)] on n-type germanium-tin (n-Ge 1-xSnx) was investigated. Low-resistivity Ni(Ge 1-xSnx) was formed on Ge1-xSnx using a 350 °C30-s anneal. Ion implantation of selenium (Se) or sulfur (S) into n-Ge1-xSnx followed by nickel stanogermanidation led to the segregation of Se or S at the Ni(Ge1-xSnx)n-Ge 1-xSnx interface. Low effective electron Schottky barrier height (ΦB n) of 0.12 and 0.11 eV was achieved for Ni(\hboxGe1-xSnx)n-Ge1-x Snx contacts with Se and S segregation, respectively. A simulation study was also performed to explain the experimental observations. Se and S atoms could be modeled as donor-like traps near the Ni(\hboxGe1-xSn x)n-Ge1-xSnx interface, modifying the potential profile near the contact and giving rise to trap-assisted tunneling to increase the reverse leakage current for ohmic contact formation. © 1963-2012 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82759 | ISSN: | 00189383 | DOI: | 10.1109/TED.2012.2233204 |
Appears in Collections: | Staff Publications |
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