Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2012.2233204
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dc.titleNi(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation
dc.contributor.authorTong, Y.
dc.contributor.authorHan, G.
dc.contributor.authorLiu, B.
dc.contributor.authorYang, Y.
dc.contributor.authorWang, L.
dc.contributor.authorWang, W.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:33:10Z
dc.date.available2014-10-07T04:33:10Z
dc.date.issued2013
dc.identifier.citationTong, Y., Han, G., Liu, B., Yang, Y., Wang, L., Wang, W., Yeo, Y.-C. (2013). Ni(Ge1-xSnx) ohmic contact formation on N-Type Ge1-xSnx using selenium or sulfur implant and segregation. IEEE Transactions on Electron Devices 60 (2) : 746-752. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2233204
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82759
dc.description.abstractThe physics of ohmic contact formation for nickel stanogermanide [NiGe 1-xSnx)] on n-type germanium-tin (n-Ge 1-xSnx) was investigated. Low-resistivity Ni(Ge 1-xSnx) was formed on Ge1-xSnx using a 350 °C30-s anneal. Ion implantation of selenium (Se) or sulfur (S) into n-Ge1-xSnx followed by nickel stanogermanidation led to the segregation of Se or S at the Ni(Ge1-xSnx)n-Ge 1-xSnx interface. Low effective electron Schottky barrier height (ΦB n) of 0.12 and 0.11 eV was achieved for Ni(\hboxGe1-xSnx)n-Ge1-x Snx contacts with Se and S segregation, respectively. A simulation study was also performed to explain the experimental observations. Se and S atoms could be modeled as donor-like traps near the Ni(\hboxGe1-xSn x)n-Ge1-xSnx interface, modifying the potential profile near the contact and giving rise to trap-assisted tunneling to increase the reverse leakage current for ohmic contact formation. © 1963-2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2012.2233204
dc.sourceScopus
dc.subjectNickel stanogermanide
dc.subjectSchottky barrier height (SBH)
dc.subjectsegregation
dc.subjectselenium (Se)
dc.subjectsulfur (S)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2012.2233204
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume60
dc.description.issue2
dc.description.page746-752
dc.description.codenIETDA
dc.identifier.isiut000316817900030
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