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Title: Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
Authors: Lee, R.T.P. 
Yang, L.-T.
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Ang, K.-W.
Lai, D.M.Y.
Hoe, K.M.
Lo, G.-Q.
Samudra, G.S. 
Chi, D.Z.
Yeo, Y.-C. 
Keywords: Fin field-effect-transistor (FinFET)
Multiple-gate transistor
Nickel silicide (NiSi)
Silicon-carbon (Si:C)
Issue Date: Jan-2008
Citation: Lee, R.T.P., Yang, L.-T., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ang, K.-W., Lai, D.M.Y., Hoe, K.M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2008-01). Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain. IEEE Electron Device Letters 29 (1) : 89-92. ScholarBank@NUS Repository.
Abstract: To explore the potential of nickel-silicide:carbon (NiSi:C) as contact technology for MOSFETs with silicon-carbon (Si:C) source/drain (S/D) regions, we examined the effects of incorporating 1.0 at.% of carbon in Si prior to nickel silicidation. The addition of carbon was found to improve the morphological and phase stability of NiSi:C contacts. This is possibly due to the presence of carbon at the NiSi:C grain boundaries and NiSi:C/Si interface, which will modify the grain-boundary and interfacial energies. This will influence the kinetics of NiSi:C silicidation. In this letter, we have also demonstrated the first integration of NiSi:C contacts in MOSFETs with Si:C S/D regions. We further show that NiSi:C silicidation suppresses the formation of active deep-level defects, leading to superior n+/p junction characteristics. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2007.910793
Appears in Collections:Staff Publications

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