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|Title:||Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors||Authors:||Wong, H.-S.
Schottky barrier height
Selenium (Se) segregation
Silicon-carbon source/drain (S/D) stressor
|Issue Date:||Aug-2008||Citation:||Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C. (2008-08). Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors. IEEE Electron Device Letters 29 (8) : 841-844. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000716||Abstract:||We explore a novel silicide contact technology for effective Schottky barrier height ΦBn and contact resistance reduction, which is compatible with an advanced silicon-carbon (Si1 -xCx) source/drain (S/D) stressor technology. The new silicide contact technology incorporates selenium (Se) that is coimplanted with S/D dopants into the silicon-carbon S/D prior to nickel silicidation, leading to the segregation of Se at the NiSi:C/n-Si0.99C0.01 interface and the achievement of excellent ohmic contact characteristics. We demonstrate that the Se-coimplantation process contributes to a 23% drive current enhancement in a strained silicon-on-insulator n-MOSFET. The enhancement is attributed to the decrease of external series resistance which is primarily due to the reduction of silicide contact resistance. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82786||ISSN:||07413106||DOI:||10.1109/LED.2008.2000716|
|Appears in Collections:||Staff Publications|
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