Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3607959
| Title: | Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As | Authors: | Ivana Pan, J. Zhang, Z. Zhang, X. Guo, H. Gong, X. Yeo, Y.-C. |
Issue Date: | 4-Jul-2011 | Citation: | Ivana, Pan, J., Zhang, Z., Zhang, X., Guo, H., Gong, X., Yeo, Y.-C. (2011-07-04). Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As. Applied Physics Letters 99 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3607959 | Abstract: | The work function of Ni-InGaAs and the band alignment between Ni-InGaAs and In0.53Ga0.47As were investigated using photoelectron spectroscopy. The vacuum work function of Ni-InGaAs is obtained to be ∼5.1 eV using ultraviolet photoelectron spectroscopy (UPS). In addition, it was observed that the Fermi level of Ni-InGaAs is aligned to near conduction band of In0.53Ga0.47As at interface. For Ni-InGaAs formed on p-type In0.53Ga0.47As, this gives a Schottky contact with a hole barrier height of 0.8 ± 0.1 eV. Ni-InGaAs would form an ohmic contact on n-type In0.53Ga0.47As. © 2011 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82896 | ISSN: | 00036951 | DOI: | 10.1063/1.3607959 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
15
checked on Aug 14, 2020
WEB OF SCIENCETM
Citations
13
checked on Aug 14, 2020
Page view(s)
119
checked on Aug 2, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.