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|Title:||NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric||Authors:||Chen, J.
Rare earth metal
|Issue Date:||Oct-2007||Citation:||Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C. (2007-10). NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Letters 28 (10) : 862-864. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.904210||Abstract:||This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82766||ISSN:||07413106||DOI:||10.1109/LED.2007.904210|
|Appears in Collections:||Staff Publications|
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