Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.904210
Title: NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
Authors: Chen, J. 
Wang, X.P.
Li, M.-F. 
Lee, S.J. 
Yu, M.B.
Shen, C.
Yeo, Y.-C. 
Keywords: Erbium
High-κ dielectric
Lanthanide
Metal gate
MOS capacitor
Rare earth metal
Issue Date: Oct-2007
Citation: Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C. (2007-10). NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Letters 28 (10) : 862-864. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.904210
Abstract: This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82766
ISSN: 07413106
DOI: 10.1109/LED.2007.904210
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