Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2007.904210
| Title: | NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric | Authors: | Chen, J. Wang, X.P. Li, M.-F. Lee, S.J. Yu, M.B. Shen, C. Yeo, Y.-C. |
Keywords: | Erbium High-κ dielectric Lanthanide Metal gate MOS capacitor Rare earth metal |
Issue Date: | Oct-2007 | Citation: | Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C. (2007-10). NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Letters 28 (10) : 862-864. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.904210 | Abstract: | This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics. © 2007 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82766 | ISSN: | 07413106 | DOI: | 10.1109/LED.2007.904210 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.