Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.904210
Title: NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric
Authors: Chen, J. 
Wang, X.P.
Li, M.-F. 
Lee, S.J. 
Yu, M.B.
Shen, C.
Yeo, Y.-C. 
Keywords: Erbium
High-κ dielectric
Lanthanide
Metal gate
MOS capacitor
Rare earth metal
Issue Date: Oct-2007
Citation: Chen, J., Wang, X.P., Li, M.-F., Lee, S.J., Yu, M.B., Shen, C., Yeo, Y.-C. (2007-10). NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectric. IEEE Electron Device Letters 28 (10) : 862-864. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.904210
Abstract: This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO2 with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82766
ISSN: 07413106
DOI: 10.1109/LED.2007.904210
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on May 23, 2018

WEB OF SCIENCETM
Citations

12
checked on May 16, 2018

Page view(s)

99
checked on May 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.