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https://doi.org/10.1109/LED.2008.920755
Title: | P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance | Authors: | Lee, R.T.-P. Tan, K.-M. Lim, A.E.-J. Liow, T.-Y. Samudra, G.S. Chi, D.-Z. Yeo, Y.-C. |
Keywords: | FinFET Nickel platinum Nickel silicide Resistance Schottky barriers |
Issue Date: | May-2008 | Citation: | Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2008-05). P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance. IEEE Electron Device Letters 29 (5) : 438-441. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920755 | Abstract: | We report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-y PtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (φB P) among the Ni1-yPtySiGe candidates evaluated. The low φB P (0.309 eV) provides a 15% reduction in series resistance Rseries. With a superior morphological stability and reduced Rseries, FinFETs integrated with Ni0.90Pt0.10SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82868 | ISSN: | 07413106 | DOI: | 10.1109/LED.2008.920755 |
Appears in Collections: | Staff Publications |
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