Please use this identifier to cite or link to this item:
|Title:||A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture||Authors:||Tran, X.A.
resistive random access memory (RRAM)
resistive switching (RS)
|Issue Date:||2012||Citation:||Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2012). A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture. IEEE Electron Device Letters 33 (10) : 1402-1404. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2210855||Abstract:||In this letter, a bipolar resistive switching RAM based on Ni/AlOy/\hboxn+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state ( > 700 at 0.2 V), a high on/off resistance ratio (> \hbox103), a good retention characteristic (> \hbox104\ \hboxs at 100 \circC ), and a wide readout margin for cross-bar architecture (number of word line N > \hbox2 5 for worst case condition). © 2012 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81909||ISSN:||07413106||DOI:||10.1109/LED.2012.2210855|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 24, 2020
WEB OF SCIENCETM
checked on Oct 16, 2020
checked on Oct 23, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.