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|Title:||A self-rectifying HfO x-based unipolar RRAM with Nisi electrode||Authors:||Tran, X.A.
|Keywords:||Resistive random access memory (RAM) (RRAM)
|Issue Date:||Apr-2012||Citation:||Tran, X.A., Zhu, W.G., Gao, B., Kang, J.F., Liu, W.J., Fang, Z., Wang, Z.R., Yeo, Y.C., Nguyen, B.Y., Li, M.F., Yu, H.Y. (2012-04). A self-rectifying HfO x-based unipolar RRAM with Nisi electrode. IEEE Electron Device Letters 33 (4) : 585-587. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2181971||Abstract:||In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81910||ISSN:||07413106||DOI:||10.1109/LED.2011.2181971|
|Appears in Collections:||Staff Publications|
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