Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2010.2045339
| Title: | A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel | Authors: | Lam, K.-T. Seah, D. Chin, S.-K. Bala Kumar, S. Samudra, G. Yeo, Y.-C. Liang, G. |
Keywords: | Graphene Heterojunction (HJ) Tunneling transistors |
Issue Date: | Jun-2010 | Citation: | Lam, K.-T., Seah, D., Chin, S.-K., Bala Kumar, S., Samudra, G., Yeo, Y.-C., Liang, G. (2010-06). A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel. IEEE Electron Device Letters 31 (6) : 555-557. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2045339 | Abstract: | The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different designs are investigated in this letter. Due to the width-dependent energy bandgap EG, a single GNR with spatially dependent width naturally yields an HJ structure to improve the device performance of a GNR TFET. By adding a small-EG region in the channel near the source and a large-EG region in the middle of the channel, the on-and off-state currents (ION and IOFF, respectively) can be tuned. Last, we have studied the effect of channel length scaling on an HJ GNR TFET, and it has been observed that an ION/IOFF ratio of four orders of magnitude can be achieved with a channel length of 10 nm and a drain bias of 0.6 V. © 2006 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81913 | ISSN: | 07413106 | DOI: | 10.1109/LED.2010.2045339 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.