Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2045339
Title: A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel
Authors: Lam, K.-T.
Seah, D.
Chin, S.-K.
Bala Kumar, S. 
Samudra, G. 
Yeo, Y.-C. 
Liang, G. 
Keywords: Graphene
Heterojunction (HJ)
Tunneling transistors
Issue Date: Jun-2010
Citation: Lam, K.-T., Seah, D., Chin, S.-K., Bala Kumar, S., Samudra, G., Yeo, Y.-C., Liang, G. (2010-06). A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel. IEEE Electron Device Letters 31 (6) : 555-557. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2045339
Abstract: The device physics and performance of heterojunction (HJ) graphene-nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different designs are investigated in this letter. Due to the width-dependent energy bandgap EG, a single GNR with spatially dependent width naturally yields an HJ structure to improve the device performance of a GNR TFET. By adding a small-EG region in the channel near the source and a large-EG region in the middle of the channel, the on-and off-state currents (ION and IOFF, respectively) can be tuned. Last, we have studied the effect of channel length scaling on an HJ GNR TFET, and it has been observed that an ION/IOFF ratio of four orders of magnitude can be achieved with a channel length of 10 nm and a drain bias of 0.6 V. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81913
ISSN: 07413106
DOI: 10.1109/LED.2010.2045339
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