Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2010.10.005
Title: A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET
Authors: Shen, C.
Yang, L.-T.
Samudra, G. 
Yeo, Y.-C. 
Keywords: Band-to-band tunneling
Modeling
TCAD simulation
Tunneling FET
Issue Date: Mar-2011
Citation: Shen, C., Yang, L.-T., Samudra, G., Yeo, Y.-C. (2011-03). A new robust non-local algorithm for band-to-band tunneling simulation and its application to tunnel-FET. Solid-State Electronics 57 (1) : 23-30. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2010.10.005
Abstract: A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics. © 2010 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/114484
ISSN: 00381101
DOI: 10.1016/j.sse.2010.10.005
Appears in Collections:Staff Publications

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