Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2313065
Title: Ballistic transport performance of silicane and germanane transistors
Authors: Low, K.L.
Huang, W.
Yeo, Y.-C. 
Liang, G. 
Keywords: Ballistic transport
Germanane
Hydrogenated silicene and germanane
Silicane
Issue Date: 2014
Citation: Low, K.L., Huang, W., Yeo, Y.-C., Liang, G. (2014). Ballistic transport performance of silicane and germanane transistors. IEEE Transactions on Electron Devices 61 (5) : 1590-1598. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2313065
Abstract: The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane and germanane, respectively, is examined. The electronic band structures of silicane and germanane are investigated using the first-principles density functional theory. Subsequently, the ballistic performance of FETs is evaluated via the semiclassical ballistic transport model. We find that silicane n-MOSFET offers a relatively better ON-current performance than transistors made of germanane and 2-D transition metal dichalcogenides (2-D-TMDs) (MoS2, MoSe 2 , WS2 , and WSe2). Germanane n-MOSFET suffers from the issue of low density of states due to its smaller electron effective mass. P-FETs based on germanane and silicane have higher ON-current than those of 2-D-TMDs p-FETs. Further investigation on other aspects of silicane and germanane MOSFETs, such as gate leakage and contact resistance, is needed to comprehensively assess their overall performance metrics. © 2014 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82000
ISSN: 00189383
DOI: 10.1109/TED.2014.2313065
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