A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2005517

Title:	A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors
Authors:	Shen, C. Ong, S.-L. Heng, C.-H. Samudra, G. Yeo, Y.-C.
Keywords:	Semiconductor device modeling Tunnel transistors Variational methods
Issue Date:	2008
Citation:	Shen, C., Ong, S.-L., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2008). A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors. IEEE Electron Device Letters 29 (11) : 1252-1255. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005517
Abstract:	In this letter, we report a new approach to treat the 2-D nonlinear Poisson's equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer. © 2008 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/54842
ISSN:	07413106
DOI:	10.1109/LED.2008.2005517
Appears in Collections:	Staff Publications

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