Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2005517
Title: A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors
Authors: Shen, C.
Ong, S.-L.
Heng, C.-H. 
Samudra, G. 
Yeo, Y.-C. 
Keywords: Semiconductor device modeling
Tunnel transistors
Variational methods
Issue Date: 2008
Source: Shen, C.,Ong, S.-L.,Heng, C.-H.,Samudra, G.,Yeo, Y.-C. (2008). A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors. IEEE Electron Device Letters 29 (11) : 1252-1255. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005517
Abstract: In this letter, we report a new approach to treat the 2-D nonlinear Poisson's equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/54842
ISSN: 07413106
DOI: 10.1109/LED.2008.2005517
Appears in Collections:Staff Publications

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