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|Title:||A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors|
|Keywords:||Semiconductor device modeling|
|Citation:||Shen, C., Ong, S.-L., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2008). A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors. IEEE Electron Device Letters 29 (11) : 1252-1255. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005517|
|Abstract:||In this letter, we report a new approach to treat the 2-D nonlinear Poisson's equation in the context of MOS devices and discuss its application in the modeling of tunneling field-effect transistors (T-FET). It is revealed that the narrowing of tunneling barrier in T-FET has different mechanisms before and after inversion layer is formed. Closed-form equation is obtained to describe the barrier narrowing in the presence of inversion layer. © 2008 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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