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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

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Author:  Cho, B.J.
Type:  Conference Paper

Results 1-20 of 47 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
22003A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer LayerPark, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
32007A novel hafnium carbide (HfCx) metal gate electrode for NMOS device applicationWan, S.H.; Chen, S.; Xing, P.W.; Chan, D.S.H. ; Byung, J.C. 
42002Advanced laser applications in microelectronics and data storage devices (invited)Lu, Y.F.; Song, W.D. ; Ren, Z.M.; An, C.W.; Liu, D.M.; Wang, W.J. ; Cho, B.J. ; Zeng, J.N. ; Tan, C.F.
52003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
62001Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
71999Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structuresYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.B.; Jang, S.A.; Yeo, I.S.
81999Design of lateral IGBT protection circuit for smart power integrationLuo, Junyang; Liang, Yung C. ; Cho, Byung-Jin 
92007Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channelZang, H.; Chua, C.K.; Loh, W.Y.; Cho, B.J. 
102007Doping of Al-catalyzed vapor-liquid-solid grown Si nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Zhu, H.C.; Gu, H.L.; Cho, B.J. ; Liew, Y.F. 
112005Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectricPark, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L.
122001Effects of electron-beam lithography on thin gate oxide reliabilityChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S. 
132004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
142003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETsHuang, C.H.; Yu, D.S.; Chin, A.; Wu, C.H.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
152007GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxyOh, H.J. ; Choi, K.J.; Loh, W.Y. ; Htoo, T. ; Chua, S.J. ; Cho, B.J. 
162003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
172005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
182003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
192007High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology nodeSuthram, S.; Majhi, P.; Sun, G.; Kalra, P.; Harris, H.R.; Choi, K.J.; Heh, D.; Oh, J.; Kelly, D.; Choi, R.; Cho, B.J. ; Hussain, M.M.; Smith, C.; Banerjee, S.; Tsai, W.; Thompson, S.E.; Tseng, H.H.; Jammy, R.
202007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.