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|Title:||Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel||Authors:||Zang, H.
|Issue Date:||2007||Citation:||Zang, H.,Chua, C.K.,Loh, W.Y.,Cho, B.J. (2007). Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel. ECS Transactions 6 (1) : 437-443. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727430||Abstract:||Dopant segregated Pt and Ni germanosilicide (PtSiGe and NiSiGe) Schottky source/drain (S/D) transistors were demonstrated on Si1-x;Ge x substrates. The Schottky barrier height of Pt-Si 0.7Ge0.3 was decreased by 0.2 eV compared to Pt-Si due to the smaller band-gap of SiGe and the dopant segregation effect. Schottky p-MOSFETs with Pt germanosilicided S/D junctions and strained Si/SiGe channels have also been demonstrated with 65 % higher drive current and lower leakage current compared with their Ni counterparts. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83647||ISBN:||9781566775502||ISSN:||19385862||DOI:||10.1149/1.2727430|
|Appears in Collections:||Staff Publications|
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