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|Title:||Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures||Authors:||Yue, J.M.P.
|Issue Date:||1999||Citation:||Yue, J.M.P.,Chim, W.K.,Cho, B.J.,Chan, D.S.H.,Qin, W.H.,Kim, Y.B.,Jang, S.A.,Yeo, I.S. (1999). Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 94-98. ScholarBank@NUS Repository.||Abstract:||Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibits less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep submicrometer MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72517|
|Appears in Collections:||Staff Publications|
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