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|Title:||Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs||Authors:||Kim, S.J.
|Issue Date:||2004||Citation:||Kim, S.J.,Cho, B.J.,Li, M.-F.,Ding, S.-J.,Yu, M.B.,Zhu, C.,Chin, A.,Kwong, D.-L. (2004). Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICs. Digest of Technical Papers - Symposium on VLSI Technology : 218-219. ScholarBank@NUS Repository.||Abstract:||It is demonstrated for the first time that voltage linearity coefficients (VCC) of metal-insulator-metal (MIM) capacitors can be engineered and virtually zero VCC can be achieved by using stacked insulator structure of high-K and SiO 2 dielectrics. Capacitance density of 6 fF/μm 2 and VCC of 14 ppm/V 2 achieved in this work are the best ever reported. The HfO 2/SiO 2 stacked MIM shows excellent performance in other parameters as well, such as low leakage current, low TCC, and stable frequency dependence.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83697||ISSN:||07431562|
|Appears in Collections:||Staff Publications|
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