Please use this identifier to cite or link to this item:
|Title:||GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy||Authors:||Oh, H.J.
|Issue Date:||2007||Citation:||Oh, H.J.,Choi, K.J.,Loh, W.Y.,Htoo, T.,Chua, S.J.,Cho, B.J. (2007). GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy. ECS Transactions 6 (1) : 95-98. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727391||Abstract:||A novel fabrication technique to grow device quality GaAs on Si substrate is proposed using thin graded SiGe-on-insulator (SGOI) substrate. Combination of low-temperature GaAs molecular beam epitaxy (MBE) growth technique, low-temperature GaAs migration enhanced epitaxy (MEE) technique, and modified two-step Ge condensation technique has demonstrated successful growth of 10-nm GaAs layer grown on a tensile strained 42-nm graded SGOI layer. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/70408||ISBN:||9781566775502||ISSN:||19385862||DOI:||10.1149/1.2727391|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.