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https://doi.org/10.1149/1.2727391
| Title: | GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy | Authors: | Oh, H.J. Choi, K.J. Loh, W.Y. Htoo, T. Chua, S.J. Cho, B.J. |
Issue Date: | 2007 | Citation: | Oh, H.J.,Choi, K.J.,Loh, W.Y.,Htoo, T.,Chua, S.J.,Cho, B.J. (2007). GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy. ECS Transactions 6 (1) : 95-98. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727391 | Abstract: | A novel fabrication technique to grow device quality GaAs on Si substrate is proposed using thin graded SiGe-on-insulator (SGOI) substrate. Combination of low-temperature GaAs molecular beam epitaxy (MBE) growth technique, low-temperature GaAs migration enhanced epitaxy (MEE) technique, and modified two-step Ge condensation technique has demonstrated successful growth of 10-nm GaAs layer grown on a tensile strained 42-nm graded SGOI layer. © The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/70408 | ISBN: | 9781566775502 | ISSN: | 19385862 | DOI: | 10.1149/1.2727391 |
| Appears in Collections: | Staff Publications |
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