Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727391
Title: GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy
Authors: Oh, H.J. 
Choi, K.J.
Loh, W.Y. 
Htoo, T. 
Chua, S.J. 
Cho, B.J. 
Issue Date: 2007
Source: Oh, H.J.,Choi, K.J.,Loh, W.Y.,Htoo, T.,Chua, S.J.,Cho, B.J. (2007). GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy. ECS Transactions 6 (1) : 95-98. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727391
Abstract: A novel fabrication technique to grow device quality GaAs on Si substrate is proposed using thin graded SiGe-on-insulator (SGOI) substrate. Combination of low-temperature GaAs molecular beam epitaxy (MBE) growth technique, low-temperature GaAs migration enhanced epitaxy (MEE) technique, and modified two-step Ge condensation technique has demonstrated successful growth of 10-nm GaAs layer grown on a tensile strained 42-nm graded SGOI layer. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70408
ISBN: 9781566775502
ISSN: 19385862
DOI: 10.1149/1.2727391
Appears in Collections:Staff Publications

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