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|Title:||GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy|
|Authors:||Oh, H.J. |
|Source:||Oh, H.J.,Choi, K.J.,Loh, W.Y.,Htoo, T.,Chua, S.J.,Cho, B.J. (2007). GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxy. ECS Transactions 6 (1) : 95-98. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727391|
|Abstract:||A novel fabrication technique to grow device quality GaAs on Si substrate is proposed using thin graded SiGe-on-insulator (SGOI) substrate. Combination of low-temperature GaAs molecular beam epitaxy (MBE) growth technique, low-temperature GaAs migration enhanced epitaxy (MEE) technique, and modified two-step Ge condensation technique has demonstrated successful growth of 10-nm GaAs layer grown on a tensile strained 42-nm graded SGOI layer. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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