Please use this identifier to cite or link to this item:
|Title:||Design of lateral IGBT protection circuit for smart power integration||Authors:||Luo, Junyang
Liang, Yung C.
|Issue Date:||1999||Citation:||Luo, Junyang,Liang, Yung C.,Cho, Byung-Jin (1999). Design of lateral IGBT protection circuit for smart power integration. Proceedings of the International Conference on Power Electronics and Drive Systems 1 : 253-257. ScholarBank@NUS Repository.||Abstract:||Monolithic Integration of Lateral Insulated Gate Bipolar Transistor (LIGBT) in power integrated circuits is a current research topic. The over-current protection schemes is usually necessary to be built as part of the functions in power integrated circuits. The protection circuit requires to distinguish various fault conditions and to react differently based on the device Safe Operating Area (SOA) limitation. At the same time, the circuit should also be relatively concise and suitable for integration. In this paper, a concise gate drive protection circuit is proposed to provide the complete function of over-current protection for LIGBT. The performance of the circuit was verified with experimental results. The implementation of the proposed circuit on lateral IGBT is also discussed and the simulation results are presented.||Source Title:||Proceedings of the International Conference on Power Electronics and Drive Systems||URI:||http://scholarbank.nus.edu.sg/handle/10635/72568|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.