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|Title:||Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs||Authors:||Huang, C.H.
|Issue Date:||2003||Citation:||Huang, C.H.,Yu, D.S.,Chin, A.,Wu, C.H.,Chen, W.J.,Zhu, C.,Li, M.F.,Cho, B.J.,Kwong, D.-L. (2003). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs. Technical Digest - International Electron Devices Meeting : 319-322. ScholarBank@NUS Repository.||Abstract:||We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/83748||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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