Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83748
Title: Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs
Authors: Huang, C.H.
Yu, D.S.
Chin, A.
Wu, C.H.
Chen, W.J.
Zhu, C. 
Li, M.F. 
Cho, B.J. 
Kwong, D.-L.
Issue Date: 2003
Source: Huang, C.H.,Yu, D.S.,Chin, A.,Wu, C.H.,Chen, W.J.,Zhu, C.,Li, M.F.,Cho, B.J.,Kwong, D.-L. (2003). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs. Technical Digest - International Electron Devices Meeting : 319-322. ScholarBank@NUS Repository.
Abstract: We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/83748
ISSN: 01631918
Appears in Collections:Staff Publications

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