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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83748
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dc.titleFully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs
dc.contributor.authorHuang, C.H.
dc.contributor.authorYu, D.S.
dc.contributor.authorChin, A.
dc.contributor.authorWu, C.H.
dc.contributor.authorChen, W.J.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:44:44Z
dc.date.available2014-10-07T04:44:44Z
dc.date.issued2003
dc.identifier.citationHuang, C.H.,Yu, D.S.,Chin, A.,Wu, C.H.,Chen, W.J.,Zhu, C.,Li, M.F.,Cho, B.J.,Kwong, D.-L. (2003). Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs. Technical Digest - International Electron Devices Meeting : 319-322. ScholarBank@NUS Repository.
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83748
dc.description.abstractWe demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting
dc.description.page319-322
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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