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|Title:||Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric||Authors:||Park, C.S.
|Issue Date:||2005||Citation:||Park, C.S.,Cho, B.J.,Hwang, W.S.,Loh, W.Y.,Tang, L.J.,Kwong, D.-L. (2005). Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 48-49. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469207||Abstract:||Dual metal gate integration scheme of using substituted Al (SA) and Pt xSi with high Pt concentration on high-K dielectric is proposed. The process can achieve a wide range of work function difference (0.65 eV) and is almost free from Fermi level pinning, without adverse effects of polysilicon pre-doping.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83651||ISSN:||07431562||DOI:||10.1109/.2005.1469207|
|Appears in Collections:||Staff Publications|
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