Please use this identifier to cite or link to this item: https://doi.org/10.1109/.2005.1469207
Title: Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric
Authors: Park, C.S. 
Cho, B.J. 
Hwang, W.S.
Loh, W.Y.
Tang, L.J.
Kwong, D.-L.
Issue Date: 2005
Citation: Park, C.S.,Cho, B.J.,Hwang, W.S.,Loh, W.Y.,Tang, L.J.,Kwong, D.-L. (2005). Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 48-49. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469207
Abstract: Dual metal gate integration scheme of using substituted Al (SA) and Pt xSi with high Pt concentration on high-K dielectric is proposed. The process can achieve a wide range of work function difference (0.65 eV) and is almost free from Fermi level pinning, without adverse effects of polysilicon pre-doping.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83651
ISSN: 07431562
DOI: 10.1109/.2005.1469207
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