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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.

Results 41-60 of 269 (Search time: 1.219 seconds).

Issue DateTitleAuthor(s)
11995Cathodoluminescence contrast of localized defects part II. Defect investigationPey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Breeze, J.F.; Myhajlenko, S.
25-Mar-1997Cathodoluminescence detectorPHANG, JACOB CHEE HONG ; CHAN, DANIEL SIU HUNG ; PEY, KIN LEONG 
31997Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structuresLiu, X.; Chan, D.S.H. ; Phang, J.C.H. ; Chim, W.K. 
41998Cathodoluminescence microscopy of semiconductor devices using a novel detector with high collection and backscattered electron rejection efficiencyPhang, J.C.H. ; Chan, D.S.H. ; Chim, W.K. ; Liu, Y.Y.; Liu, X.
51999Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structuresYue, J.M.P.; Chim, W.K. ; Cho, B.J. ; Chan, D.S.H. ; Qin, W.H.; Kim, Y.B.; Jang, S.A.; Yeo, I.S.
6Apr-2007Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivationWu, N.; Zhang, Q.; Balasubramanian, N.; Chan, D.S.H. ; Zhu, C. 
72004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
81995Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement techniqueLeang, S.E.; Chan, D.S.H. ; Chim, W.K. 
91997Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETsLou, C.L.; Song, J.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
10Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
111999Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devicesSong, J.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
121994Charging dynamics of integrated circuit passivation layer probe holes in the electron beam testerPhang, J.C.H. ; Sim, K.S. ; Chan, D.S.H. 
13Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
142007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
15Jul-2001Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic DetectionRau, E.I.; Gostev, A.V.; Shiqiu, Z.; Phang, D. ; Chan, D. ; Thong, D. ; Wong, W. 
161999Comparative study of charge trapping effects in LDD surface-channel and buried-channel PMOS transistors using charge profiling and threshold voltage shift measurementsKok, C.K.; Chew, W.C.; Chim, W.K. ; Chan, D.S.H. ; Leang, S.E.
171995Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gateLow, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
1816-Oct-2007Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Teo, E.Y.H. ; Zhu, C.X. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.G. 
192009Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applicationsZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J.
202009Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constantHe, W. ; Zhang, L.; Chan, D.S.H. ; Cho, B.-J.