Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.

Results 21-40 of 269 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
212006A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrateTan, Y.P.; Ling, Q.D. ; Teo Eric, Y.H.; Song, Y.; Lim, S.L.; Lo Patrick, G.Q.; Kang, E.T. ; Zhu, C. ; Chan, D.S.H. 
221-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
232009Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devicesPu, J. ; Chan, D.S.H. ; Kim, S.-J.; Cho, B.J.
24Jun-1993An energy dependent model for type I magnetic contrast in the scanning electron microscopeChim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Low, T.S. ; Thirumalai, S.
251999An improved drain-current-conductance method with substrate back-biasingTan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
262009An organic-based diode-memory device with rectifying property for crossbar memory array applicationsTeo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
271997Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscopeTao, J.M. ; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.
282003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
29Feb-1987ANALYTICAL METHODS FOR THE EXTRACTION OF SOLAR-CELL SINGLE- AND DOUBLE-DIODE MODEL PARAMETERS FROM I-V CHARACTERISTICS.Chan, Daniel S.H. ; Phang, Jacob C.H. 
302000Application of Single Contact Optical Beam Induced Currents (SCOBIC) for Backside Failure AnalysisPalaniappan, M. ; Chin, J.M.; Phang, J.C.H. ; Chan, D.S.H. ; Soh, C.E.; Gilfeather, G.
311998Automatic control and real-time monitoring of laser cleaning and laser ablationLu, Y.F. ; Meng, M.; Hong, M.H. ; Low, T.S. ; Chan, D.S.H. 
322006Bi-stable state for WORM application based on carbazole-containing polymerTeo, E.Y.H. ; Ling, Q. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
332008Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline compositeLi, L. ; Ling, Q.-D. ; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
3430-Nov-2006Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexesLing, Q.-D. ; Wang, W.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
352008Bistable electrical switching and rewritable memory effect in a thin film acrylate copolymer containing carbazole-oxadiazole donor-acceptor pendant groupsTeo, E.Y.H. ; Ling, Q.D.; Lim, S.L.; Neoh, K.G.; Kang, E.T.; Chan, D.S.H. ; Zhu, C.X. 
362007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
372005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
381-Mar-2000Can physical analysis aid in device characterization?Chan, D.S.H. ; Chim, W.K. ; Phang, J.C.H. ; Liu, Y.Y.; Ng, T.H.; Xiao, H.
39Jan-1999Carbon nitride thin films deposited by nitrogen-ion-assisted KRF excimer ablation of graphiteFeng, L.Y. ; Min, R.Z.; Qiao, N.H.; Feng, H.Z.; Chan, D.S.H. ; Seng, L.T. ; Yin, C.S.; Gamani, K. ; Geng, C. ; Kun, L.
401995Cathodoluminescence contrast of localized defects part I. Numerical model for simulationPey, K.L. ; Chan, D.S.H. ; Phang, J.C.H. ; Breese, J.F.; Myhajlenko, S.