Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.

Results 181-200 of 269 (Search time: 0.013 seconds).

Issue DateTitleAuthor(s)
1812-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1822009Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channelJiang, Y.; Singh, N.; Liow, T.Y.; Lim, P.C.; Tripathy, S.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.-L.
183Jul-1994Optoelectronic material analysis and device failure analysis using SEM cathodoluminescencePey, K.L. ; Chim, W.K. ; Phang, J.C.H. ; Chan, D.S.H. 
184Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
1852008Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contactsJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
1862009Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxideHe, W. ; Pu, J. ; Chan, D.S.H. ; Cho, B.J.
1871999Performance spread optimization of MOS VLSI circuit by statistical parameter designChen, H.M.; Samudra, G.S. ; Chan, D.S.H. ; Ibrahim, Y. 
188Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
18915-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
19028-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
191Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
192Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
19324-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
19424-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1952008Process and material properties of HfLaOx prepared by atomic layer depositionHe, W. ; Chan, D.S.H. ; Kim, S.-J.; Kim, Y.-S.; Kim, S.-T.; Cho, B.J.
19621-Jul-1999Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrateLiu, X.; Phang, J.C.H. ; Chan, D.S.H. ; Chim, W.K. 
1975-Oct-1999Pulse laser induced removal of mold flash on integrated circuit packagesLU, YONG FENG ; CHAN, DANIEL SIU HUNG ; LOW, TECK SENG 
19829-Apr-2003Pulsed single contact optical beam induced current analysis of integrated circuitsMIN, CHIN JIANN; KOLACHINA, SIVARAMAKRISHNA; PHANG, JACOB C. H. ; CHAN, DANIEL S. H. 
1991995Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced currentLau, W.S. ; Chan, D.S.H. ; Phang, J.C.H. ; Chow, K.W.; Pey, K.S.; Lim, Y.P.; Sane, V. ; Cronquist, B.
2001995Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced currentLau, W.S. ; Chan, D.S.H. ; Phang, J.C.H. ; Chow, K.W.; Pey, K.S.; Lim, Y.P.; Sane, V. ; Cronquist, B.