Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/32/14/302

Title:	Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate
Authors:	Liu, X. Phang, J.C.H. Chan, D.S.H. Chim, W.K.
Issue Date:	21-Jul-1999
Citation:	Liu, X., Phang, J.C.H., Chan, D.S.H., Chim, W.K. (1999-07-21). Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate. Journal of Physics D: Applied Physics 32 (14) : 1563-1569. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/32/14/302
Abstract:	Cathodoluminescence (CL) spectra from a silicon dioxide (SiO2) film on silicon (Si) substrate were studied. The temperature-dependent results of the 2.7 eV peak suggest that the quantum efficiency increases but the build-up of electron-beam-irradiation-induced luminescence centres decreases upon specimen cooling. The voltage-dependent behaviour of the 2.7 eV peak does not show any luminescence enhancement from the SiO2-Si interface.
Source Title:	Journal of Physics D: Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/81023
ISSN:	00223727
DOI:	10.1088/0022-3727/32/14/302
Appears in Collections:	Staff Publications

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