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https://doi.org/10.1088/0022-3727/32/14/302
| Title: | Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate | Authors: | Liu, X. Phang, J.C.H. Chan, D.S.H. Chim, W.K. |
Issue Date: | 21-Jul-1999 | Citation: | Liu, X., Phang, J.C.H., Chan, D.S.H., Chim, W.K. (1999-07-21). Properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate. Journal of Physics D: Applied Physics 32 (14) : 1563-1569. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/32/14/302 | Abstract: | Cathodoluminescence (CL) spectra from a silicon dioxide (SiO2) film on silicon (Si) substrate were studied. The temperature-dependent results of the 2.7 eV peak suggest that the quantum efficiency increases but the build-up of electron-beam-irradiation-induced luminescence centres decreases upon specimen cooling. The voltage-dependent behaviour of the 2.7 eV peak does not show any luminescence enhancement from the SiO2-Si interface. | Source Title: | Journal of Physics D: Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/81023 | ISSN: | 00223727 | DOI: | 10.1088/0022-3727/32/14/302 |
| Appears in Collections: | Staff Publications |
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