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|Title:||Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide||Authors:||He, W.
Lanthanum aluminum oxide
Lanthanum hafnium oxide
Trapping energy depth
|Issue Date:||2009||Citation:||He, W., Pu, J., Chan, D.S.H., Cho, B.J. (2009). Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide. IEEE Transactions on Electron Devices 56 (11) : 2746-2751. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030833||Abstract:||Lanthanum-based high-κ dielectrics (LaAlOx and LaHfOx) are systematically investigated as blocking oxide in charge-trap-type Flash memory devices. Compared to Al2 O3 blocking oxide, LaAlOx not only exhibits faster program speed, wider Vth window, and more robustness to voltage stress but also has better retention performance when the temperature is below 120 °C, particularly at 85 °C. In contrast, although further improvements in Vth window and robustness are achieved using a higher permittivity dielectric LaHfOx, its retention performance is poor. It is found that the retention property is critically determined by the conduction band offset of a blocking oxide. This is caused by the shallow trapping energy depth inside the nitride which is calculated to be 0.6-0.75 eV below the conduction band edge. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82875||ISSN:||00189383||DOI:||10.1109/TED.2009.2030833|
|Appears in Collections:||Staff Publications|
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