Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030833
Title: Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide
Authors: He, W. 
Pu, J. 
Chan, D.S.H. 
Cho, B.J.
Keywords: Blocking oxide
Lanthanum aluminum oxide
Lanthanum hafnium oxide
Nitride
SONOS
Trapping energy depth
Issue Date: 2009
Citation: He, W., Pu, J., Chan, D.S.H., Cho, B.J. (2009). Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide. IEEE Transactions on Electron Devices 56 (11) : 2746-2751. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030833
Abstract: Lanthanum-based high-κ dielectrics (LaAlOx and LaHfOx) are systematically investigated as blocking oxide in charge-trap-type Flash memory devices. Compared to Al2 O3 blocking oxide, LaAlOx not only exhibits faster program speed, wider Vth window, and more robustness to voltage stress but also has better retention performance when the temperature is below 120 °C, particularly at 85 °C. In contrast, although further improvements in Vth window and robustness are achieved using a higher permittivity dielectric LaHfOx, its retention performance is poor. It is found that the retention property is critically determined by the conduction band offset of a blocking oxide. This is caused by the shallow trapping energy depth inside the nitride which is calculated to be 0.6-0.75 eV below the conduction band edge. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82875
ISSN: 00189383
DOI: 10.1109/TED.2009.2030833
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