Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030833
DC FieldValue
dc.titlePerformance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide
dc.contributor.authorHe, W.
dc.contributor.authorPu, J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:34:32Z
dc.date.available2014-10-07T04:34:32Z
dc.date.issued2009
dc.identifier.citationHe, W., Pu, J., Chan, D.S.H., Cho, B.J. (2009). Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxide. IEEE Transactions on Electron Devices 56 (11) : 2746-2751. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030833
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82875
dc.description.abstractLanthanum-based high-κ dielectrics (LaAlOx and LaHfOx) are systematically investigated as blocking oxide in charge-trap-type Flash memory devices. Compared to Al2 O3 blocking oxide, LaAlOx not only exhibits faster program speed, wider Vth window, and more robustness to voltage stress but also has better retention performance when the temperature is below 120 °C, particularly at 85 °C. In contrast, although further improvements in Vth window and robustness are achieved using a higher permittivity dielectric LaHfOx, its retention performance is poor. It is found that the retention property is critically determined by the conduction band offset of a blocking oxide. This is caused by the shallow trapping energy depth inside the nitride which is calculated to be 0.6-0.75 eV below the conduction band edge. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2009.2030833
dc.sourceScopus
dc.subjectBlocking oxide
dc.subjectLanthanum aluminum oxide
dc.subjectLanthanum hafnium oxide
dc.subjectNitride
dc.subjectSONOS
dc.subjectTrapping energy depth
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2009.2030833
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume56
dc.description.issue11
dc.description.page2746-2751
dc.description.codenIETDA
dc.identifier.isiut000271019500048
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