An organic-based diode-memory device with rectifying property for crossbar memory array applications

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2017387

Title:	An organic-based diode-memory device with rectifying property for crossbar memory array applications
Authors:	Teo, E.Y.H. Zhang, C. Lim, S.L. Kang, E.-T. Chan, D.S.H. Zhu, C.
Keywords:	Memory array Polymer diode Polymer memory Rectifying polymer memory
Issue Date:	2009
Citation:	Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). An organic-based diode-memory device with rectifying property for crossbar memory array applications. IEEE Electron Device Letters 30 (5) : 487-489. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017387
Abstract:	An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 103 and a high rectification ratio of 103. The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array. © 2009 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81954
ISSN:	07413106
DOI:	10.1109/LED.2009.2017387
Appears in Collections:	Staff Publications

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