Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2017387
Title: An organic-based diode-memory device with rectifying property for crossbar memory array applications
Authors: Teo, E.Y.H. 
Zhang, C. 
Lim, S.L.
Kang, E.-T. 
Chan, D.S.H. 
Zhu, C. 
Keywords: Memory array
Polymer diode
Polymer memory
Rectifying polymer memory
Issue Date: 2009
Citation: Teo, E.Y.H., Zhang, C., Lim, S.L., Kang, E.-T., Chan, D.S.H., Zhu, C. (2009). An organic-based diode-memory device with rectifying property for crossbar memory array applications. IEEE Electron Device Letters 30 (5) : 487-489. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017387
Abstract: An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 103 and a high rectification ratio of 103. The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81954
ISSN: 07413106
DOI: 10.1109/LED.2009.2017387
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