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|Title:||Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope||Authors:||Tao, J.M.
|Issue Date:||1997||Citation:||Tao, J.M.,Chim, W.K.,Chan, D.S.H.,Phang, J.C.H.,Liu, Y.Y. (1997). Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 33-38. ScholarBank@NUS Repository.||Abstract:||Two normalization methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: λ1.0 and λ50%, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81376|
|Appears in Collections:||Staff Publications|
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