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https://doi.org/10.1109/16.740913
| Title: | An improved drain-current-conductance method with substrate back-biasing | Authors: | Tan, C.B. Chim, W.K. Chan, D.S.H. Lou, C.L. |
Keywords: | Body effect Channel mobility MOSFET Parameter extraction Series resistance |
Issue Date: | 1999 | Citation: | Tan, C.B., Chim, W.K., Chan, D.S.H., Lou, C.L. (1999). An improved drain-current-conductance method with substrate back-biasing. IEEE Transactions on Electron Devices 46 (2) : 431-433. ScholarBank@NUS Repository. https://doi.org/10.1109/16.740913 | Abstract: | A previously developed drain-current-conductance method (DCCM) is extended to investigate the effect of back-bias on LATID NMOSFET's. For the same effective gate overdrive, the extracted drain and source series resistances increase as the back-bias is increased. Twodimensional device simulation showed that the increased back-bias results in reduced current contour values at the drain/source regions as a result of the increase in the series resistances. © 1999 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/61811 | ISSN: | 00189383 | DOI: | 10.1109/16.740913 |
| Appears in Collections: | Staff Publications |
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