Please use this identifier to cite or link to this item:
|Title:||Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications||Authors:||Zhang, L.
|Issue Date:||2009||Citation:||Zhang, L.,He, W.,Chan, D.S.H.,Cho, B.J. (2009). Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications. ECS Transactions 19 (2) : 615-623. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3122120||Abstract:||Metal-Insulator-Metal (MIM) capacitors with various thickness as (22 nm, 30 nm, 37 nm and 44 nm) of La (8%) doped HfO2 deposited using atomic layer deposition were fabricated. A high dielectric constant value of 38 can be obtained when 8% La doped HfO2 is crystallized into cubic structure. While amorphous HfLaO demonstrates a quadratic voltage linearity||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83597||ISBN:||9781566777100||ISSN:||19385862||DOI:||10.1149/1.3122120|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.