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|Title:||Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique||Authors:||Leang, S.E.
|Issue Date:||1995||Citation:||Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1995). Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 96-101. ScholarBank@NUS Repository.||Abstract:||With the continual miniaturization of MOS devices, hot-carrier degradation has become a major reliability issue. Several techniques have been developed to characterize the hot-carrier degradation in MOSFETs. Of these, the gate-current measurement and charge-pumping techniques have shown to be particularly attractive. However, only the gate-current measurement technique can be used on non-isolated, practical devices. A new gate-current measurement technique is developed, which requires a much shorter time to obtain the Ig-Vg characteristic curves of MOSFETs as compared to the conventional floating gate technique.||Source Title:||Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81386|
|Appears in Collections:||Staff Publications|
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