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|Title:||Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures||Authors:||Liu, X.
|Issue Date:||1997||Citation:||Liu, X.,Chan, D.S.H.,Phang, J.C.H.,Chim, W.K. (1997). Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 270-274. ScholarBank@NUS Repository.||Abstract:||In this paper, we describe the observation of a new phenomenon which may be extended to provide a non-electrical and physical evaluation of the electrical stress degradation of Si-SiO2 structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81385|
|Appears in Collections:||Staff Publications|
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