Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81385
Title: Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures
Authors: Liu, X.
Chan, D.S.H. 
Phang, J.C.H. 
Chim, W.K. 
Issue Date: 1997
Source: Liu, X.,Chan, D.S.H.,Phang, J.C.H.,Chim, W.K. (1997). Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 270-274. ScholarBank@NUS Repository.
Abstract: In this paper, we describe the observation of a new phenomenon which may be extended to provide a non-electrical and physical evaluation of the electrical stress degradation of Si-SiO2 structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described.
Source Title: Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/81385
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